advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v simple drive requirement r ds(on) 28m dual n mosfet package i d 6.7a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice pb free plating product thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor storage temperature range continuous drain current 3 5.2 pulsed drain current 1 30 parameter drain-source voltage gate-source voltage continuous drain current 3 200622062-1/4 AP9965GEM rating 40 16 6.7 0.016 s1 g1 s2 g2 d1 d1 d2 d2 so-8 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 d1 s2 g2 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.045 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 28 m v gs =4.5v, i d =4a - - 32 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =6a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v, v gs =0v - - 25 ua i gss gate-source leakage v gs =16v - - 30 ua q g total gate charge 2 i d =6a - 8.3 13 nc q gs gate-source charge v ds =30v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.6 - nc t d(on) turn-on delay time 2 v ds =20v - 4.6 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 19.6 - ns t f fall time r d =20 - 5.4 - ns c iss input capacitance v gs =0v - 615 980 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.8 2.7 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =6a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. 2/4 AP9965GEM
AP9965GEM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3/4 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0 v 5.0 v 4.5 v v g = 3.0 v 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0 v 5.0 v 4.5 v v g = 3.0 v 20 45 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t a =25 0.7 1.0 1.3 1.6 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10.0 20.0 30.0 40.0 50.0 0 10203040 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP9965GEM q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =25v v ds =30v i d =6a 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 sin g le pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 135 /w t t 0.02 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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